InP MESFET with high breakdown voltage

Wei Yang, Z. Abid, A. Gopinath, F. Williamson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the fabrication of InP n-channel MESFET with high breakdown voltage. Using buried p+ planar doping, we have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 volt. RF measurement gave fmax = 15 GHz for 1 μm gate length device and 9 GHz for 2 μm device.

Original languageEnglish (US)
Title of host publicationLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages368-370
Number of pages3
ISBN (Electronic)0780305221, 9780780305229
DOIs
StatePublished - Jan 1 1992
EventLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States
Duration: Apr 21 1992Apr 24 1992

Publication series

NameLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

ConferenceLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
CountryUnited States
CityNewport
Period4/21/924/24/92

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