TY - GEN
T1 - InP MESFET with high breakdown voltage
AU - Yang, Wei
AU - Abid, Z.
AU - Gopinath, A.
AU - Williamson, F.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - We report the fabrication of InP n-channel MESFET with high breakdown voltage. Using buried p+ planar doping, we have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 volt. RF measurement gave fmax = 15 GHz for 1 μm gate length device and 9 GHz for 2 μm device.
AB - We report the fabrication of InP n-channel MESFET with high breakdown voltage. Using buried p+ planar doping, we have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 volt. RF measurement gave fmax = 15 GHz for 1 μm gate length device and 9 GHz for 2 μm device.
UR - http://www.scopus.com/inward/record.url?scp=85068267268&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068267268&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.1992.235675
DO - 10.1109/ICIPRM.1992.235675
M3 - Conference contribution
AN - SCOPUS:85068267268
T3 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
SP - 368
EP - 370
BT - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Y2 - 21 April 1992 through 24 April 1992
ER -