Abstract
High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\ LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.
Original language | English (US) |
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Article number | 063302 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 6 |
DOIs | |
State | Published - 2009 |
Bibliographical note
Funding Information:This work is supported by the NSFC Contract No. 10621063, the MOST, the Science and Technology Commission of Shanghai Municipality Contract No. 08JC1402300, and the Innovation Foundation of NSRL Contract No. 20080106S.