Interfacial reactions at Al/LiF and LiF/Al

Z. T. Xie, W. H. Zhang, B. F. Ding, X. D. Gao, Y. T. You, Z. Y. Sun, X. M. Ding, X. Y. Hou

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15 Scopus citations

Abstract

High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\ LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.

Original languageEnglish (US)
Article number063302
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
StatePublished - Feb 23 2009

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