Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

W. Walukiewicz; L. Hsu; J. M. Redwing

Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

W. Walukiewicz, L. Hsu, J. M. Redwing

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Abstract

We present the results of a theoretical study of the 2D electron gas mobility at a Al_xGa_1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a Al_xGa_1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al_0.15Ga_0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

Original language	English (US)
Pages (from-to)	573-578
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	449
State	Published - Jan 1 1997
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

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title = "Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures",

abstract = "We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.",

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TY - JOUR

T1 - Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

AU - Walukiewicz, W.

AU - Hsu, L.

AU - Redwing, J. M.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

AB - We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

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M3 - Conference article

AN - SCOPUS:0030713476

SN - 0272-9172

VL - 449

SP - 573

EP - 578

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 6 December 1996

ER -

Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

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