Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process

Nakul Pande; Gyusung Park; Chris H. Kim; Srikanth Krishnan; Vijay Reddy

doi:10.1109/IRPS.2019.8720564

Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process

Nakul Pande, Gyusung Park, Chris H. Kim, Srikanth Krishnan, Vijay Reddy

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

This work presents measured test-data corresponding to a comprehensive reliability characterization of diode-connected MOS transistors. An array-based test structure, with the specific aim of quantifying the impact of feedback on the aging dynamics for the circuit configuration of interest was designed and implemented in a 65nm Low-Power (LP) process. Through detailed measurement data obtained using the test-vehicle we, (1) characterize the impact of feedback on the aging rate and compare it to the no-feedback case (2) evaluate the efficacy of iterative simulations for lifetime projection in such scenarios with the method based on the universality of hot carrier degradation extended to the case featuring feedback.

Original language	English (US)
Title of host publication	2019 IEEE International Reliability Physics Symposium, IRPS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538695043
DOIs	https://doi.org/10.1109/IRPS.2019.8720564
State	Published - May 22 2019
Event	2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States Duration: Mar 31 2019 → Apr 4 2019

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2019-March
ISSN (Print)	1541-7026

Conference

Conference	2019 IEEE International Reliability Physics Symposium, IRPS 2019
Country/Territory	United States
City	Monterey
Period	3/31/19 → 4/4/19

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by in part by the Semiconductor Research Corporation (SRC) and the Texas Analog Center of Excellence (TxACE).

Publisher Copyright:
© 2019 IEEE.

Keywords

Analog / Mixed-Signal Aging
Bond-dispersion model
Circuit aging
Circuit reliability
Hot carrier injection (HCI)
Lateral scaling
Universality of degradation
Voltage acceleration model

Access

10.1109/IRPS.2019.8720564

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Cite this

Pande, N., Park, G., Kim, C. H., Krishnan, S., & Reddy, V. (2019). Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019 Article 8720564 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720564

Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process. / Pande, Nakul; Park, Gyusung; Kim, Chris H. et al.
2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8720564 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pande, N, Park, G, Kim, CH, Krishnan, S & Reddy, V 2019, Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process. in 2019 IEEE International Reliability Physics Symposium, IRPS 2019., 8720564, IEEE International Reliability Physics Symposium Proceedings, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, United States, 3/31/19. https://doi.org/10.1109/IRPS.2019.8720564

Pande N, Park G, Kim CH, Krishnan S, Reddy V. Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8720564. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2019.8720564

Pande, Nakul ; Park, Gyusung ; Kim, Chris H. et al. / Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process. 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (IEEE International Reliability Physics Symposium Proceedings).

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abstract = "This work presents measured test-data corresponding to a comprehensive reliability characterization of diode-connected MOS transistors. An array-based test structure, with the specific aim of quantifying the impact of feedback on the aging dynamics for the circuit configuration of interest was designed and implemented in a 65nm Low-Power (LP) process. Through detailed measurement data obtained using the test-vehicle we, (1) characterize the impact of feedback on the aging rate and compare it to the no-feedback case (2) evaluate the efficacy of iterative simulations for lifetime projection in such scenarios with the method based on the universality of hot carrier degradation extended to the case featuring feedback.",

keywords = "Analog / Mixed-Signal Aging, Bond-dispersion model, Circuit aging, Circuit reliability, Hot carrier injection (HCI), Lateral scaling, Universality of degradation, Voltage acceleration model",

author = "Nakul Pande and Gyusung Park and Kim, {Chris H.} and Srikanth Krishnan and Vijay Reddy",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by in part by the Semiconductor Research Corporation (SRC) and the Texas Analog Center of Excellence (TxACE). Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Reliability Physics Symposium, IRPS 2019 ; Conference date: 31-03-2019 Through 04-04-2019",

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Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process

Abstract

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Bibliographical note

Keywords

Access

OpenUrl availability

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