Investigation of γ′-Fe4N thin films deposited on Si(1 0 0) and GaAs(1 0 0) substrates by facing target magnetron sputtering

Yuanyuan Na, Cong Wang, Jinzhong Xiang, Nian Ji, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

γ′-Fe4N thin films with good soft magnetic properties were successfully prepared on single crystal Si(1 0 0) and GaAs(1 0 0) substrates with Fe buffer layer by facing target magnetron sputtering. The microstructure and magnetic properties of the samples at low temperature were investigated. Both structural and magnetic properties of the films were shown to be influenced by the substrate. Specifically, the film deposited on the GaAs exhibited a strong preferred orientation along the (1 0 0) plane, while the film deposited on Si exhibited higher saturation magnetization (Ms) and lower coercivity (Hc). The results suggest that the coercivity is probably related to the intrinsic stress and that Ms increases whereas Hc decreases with decreasing lattice mismatch. The Mr/Ms ratio decreased with decreasing temperature due to the effect of the thermal disturbance on the magnetization. Both films had a single easy magnetized direction parallel to the substrate plane.

Original languageEnglish (US)
Pages (from-to)117-122
Number of pages6
JournalJournal of Crystal Growth
Volume426
DOIs
StatePublished - Jun 22 2015

Keywords

  • A3. Magnetic properties
  • Facing target magnetron sputtering
  • γ′-FeN thin film

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