Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling

T. Li, P. P. Ruden, I. H. Campbell, D. L. Smith

Research output: Contribution to journalArticlepeer-review

79 Scopus citations

Abstract

The simulation of organic field effect transistors (OFET) was presented. The results of the two-dimensional modeling of the OFET showed that the surface potential on the polymer layer closely matched the channel potential. The results for the transistor output characteristics and the effects associated with changes in charge carrier injection were also presented.

Original languageEnglish (US)
Pages (from-to)4017-4022
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
StatePublished - Apr 1 2003

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