Ga-doped ZnO (GZO) transparent conducting films were deposited on sapphire (0001) substrates using dual ion beam sputtering deposition system. The impact of growth temperature on the structural, morphological, elemental, optical, and electrical properties was thoroughly investigated and reported. X-ray diffraction measurements explicitly confirmed that all GZO films had (002) preferred crystal orientation. The film deposited at 400 C exhibited the narrowest full-width at half-maximum value of 0.24 for (002) crystalline plane and the lowest room temperature electrical resistivity of 4.11 × 10 -3cm. The Raman spectra demonstrated the vibrational modes at 576 and 650-670 cm-1, associated with native oxygen vacancies and elemental Ga doping in ZnO lattice, respectively. All doped films showed an overall transmittance of above 95 % in the visible spectra. A correlation between structural, optical, elemental, and electrical properties with GZO growth temperature was established.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Materials Science: Materials in Electronics|
|State||Published - Dec 2013|
Bibliographical noteFunding Information:
M. Gupta ⨯ V. Sathe University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore, India
Acknowledgments This work is partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010. This work is also supported by DST Science and Engineering Research Board (SERB) project number SR/S3/EECE/0142/2011 and Council of Scientific and Industrial Research (CSIR) project number 22(0608)/12/EMR-II. We are grateful for the Atomic Force Microscopy (AFM) Facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore.