TY - JOUR
T1 - Investigation on the electrical properties of superlattice FETs using a non-parabolic band model
AU - Maiorano, P.
AU - Gnani, E.
AU - Grassi, R.
AU - Gnudi, A.
AU - Reggiani, S.
AU - Baccarani, G.
PY - 2014/8
Y1 - 2014/8
N2 - The effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0.48As superlattice FET has been investigated. An energy dependent effective mass was fitted on k · p simulation results and the new band model was implemented into a self-consistent Schrödinger-Poisson solver. This analysis has shown that non-parabolicity effects lead to noticeable changes of the device characteristics with respect the parabolic band model, namely: an increase of the on-state current and a steeper transition from the off- to the on-state sustained across several decades of current, at the expense of an increased off-state leakage. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.
AB - The effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0.48As superlattice FET has been investigated. An energy dependent effective mass was fitted on k · p simulation results and the new band model was implemented into a self-consistent Schrödinger-Poisson solver. This analysis has shown that non-parabolicity effects lead to noticeable changes of the device characteristics with respect the parabolic band model, namely: an increase of the on-state current and a steeper transition from the off- to the on-state sustained across several decades of current, at the expense of an increased off-state leakage. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.
KW - Nanowire field-effect transistor (NW-FET)
KW - Non-parabolicity effects
KW - Supelattice-based NW-FET
KW - k · p Band structures
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U2 - 10.1016/j.sse.2014.04.010
DO - 10.1016/j.sse.2014.04.010
M3 - Article
AN - SCOPUS:84902294770
SN - 0038-1101
VL - 98
SP - 45
EP - 49
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -