Ion gel gated polymer thin-film transistors

Jiyoul Lee, Matthew J. Panzer, Yiyong He, Timothy P. Lodge, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

361 Scopus citations

Abstract

We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 μF/cm2 at 10 Hz and 2 μF/cm2 at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (>100 Hz).

Original languageEnglish (US)
Pages (from-to)4532-4533
Number of pages2
JournalJournal of the American Chemical Society
Volume129
Issue number15
DOIs
StatePublished - Apr 18 2007

Fingerprint

Dive into the research topics of 'Ion gel gated polymer thin-film transistors'. Together they form a unique fingerprint.

Cite this