ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography

B. Zhang, T. Cui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-cost and facile shrink lithography derived graphene nanoribbon (GNR) was suspended on the channel to form an ion-sensitive field effect transistor (ISFET), and its pH sensing application is presented. By combining a thermoplastic film with a molding process, GNR patterns 50 nm wide were achieved in a low-cost and simple way. Ambipolar characteristics of annealed suspended GNR ISFET present an enhanced ambipolar effect. In comparison, unsuspended GNR and microscale graphene sheets based ISFETs were characterized under the same design, fabrication, and measurement conditions, showing that the suspended GNR ISFET is superior in sensitivity and detection limits.

Original languageEnglish (US)
Title of host publication2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
EditorsMehran Mehregany, David J. Monk
PublisherTransducer Research Foundation
Pages205-208
Number of pages4
ISBN (Electronic)9780964002494
DOIs
StatePublished - 2012
Event2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 - Hilton Head, United States
Duration: Jun 3 2012Jun 7 2012

Publication series

NameTechnical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Other

Other2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
CountryUnited States
CityHilton Head
Period6/3/126/7/12

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