Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when VDS increases, due to a shunt effect.
Bibliographical noteFunding Information:
Manuscript received July 14, 2018; revised September 22, 2018; accepted October 16, 2018. Date of publication October 22, 2018; date of current version January 17, 2019. This work was supported by the Defense Threat Reduction Agency Basic Research under Award HDTRA1-14-1-0042.
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- Black phosphorus (BP)
- pulsed laser irradiation
- single-event effects (SEEs)
- transient characterization