Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

C. Liang; R. Ma; K. Li; Y. Su; H. Gong; K. L. Ryder; P. Wang; A. L. Sternberg; E. X. Zhang; M. L. Alles; R. A. Reed; Steven J Koester; D. M. Fleetwood; R. D. Schrimpf

doi:10.1109/TNS.2018.2877412

Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

C. Liang, R. Ma, K. Li, Y. Su, H. Gong, K. L. Ryder, P. Wang, A. L. Sternberg, E. X. Zhang, M. L. Alles, R. A. Reed, Steven J Koester, D. M. Fleetwood, R. D. Schrimpf

Electrical and Computer Engineering

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4 Scopus citations

Abstract

Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when V_DS increases, due to a shunt effect.

Original language	English (US)
Article number	8502101
Pages (from-to)	384-388
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2018.2877412
State	Published - Jan 2019

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Black phosphorus (BP)
pulsed laser irradiation
single-event effects (SEEs)
transient characterization

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title = "Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs",

abstract = "Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when VDS increases, due to a shunt effect.",

keywords = "Black phosphorus (BP), pulsed laser irradiation, single-event effects (SEEs), transient characterization",

author = "C. Liang and R. Ma and K. Li and Y. Su and H. Gong and Ryder, {K. L.} and P. Wang and Sternberg, {A. L.} and Zhang, {E. X.} and Alles, {M. L.} and Reed, {R. A.} and Koester, {Steven J} and Fleetwood, {D. M.} and Schrimpf, {R. D.}",

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AU - Ma, R.

AU - Li, K.

AU - Su, Y.

AU - Gong, H.

AU - Ryder, K. L.

AU - Wang, P.

AU - Sternberg, A. L.

AU - Zhang, E. X.

AU - Alles, M. L.

AU - Reed, R. A.

AU - Koester, Steven J

AU - Fleetwood, D. M.

AU - Schrimpf, R. D.

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AB - Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when VDS increases, due to a shunt effect.

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KW - single-event effects (SEEs)

KW - transient characterization

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Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

Abstract

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Keywords

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