Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The operation of laterally-scaled Silicon (Si)/SiGe n-MODFETs with buried in situ and ion-impanted p-well doping was investigated. The layer stuctures were grown by UHV-chemical vapor deposition (CVD) on 8 inch Si wafers and consisted of a Si 0.7Ge 0.3 bottom barrier layer, a Si quantum well, a top undoped Si 0.7Ge 0.3 spacer layer and a Si cap layer. MODFETs utilizing implanted p-wells were characterized using dc I-V measurements at room temperature. Results show that the devices have improved subthreshold behavior, greatly improved self-gain and improved speed-power product compared with undoped controls.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages107-108
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
Country/TerritoryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

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