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Dive into the research topics of 'Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping'. Together they form a unique fingerprint.- Sort by
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S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes, S. E. Steen
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution