Layer Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly Anisotropic Black As

Hwanhui Yun, Supriya Ghosh, Prafful Golani, Steven J. Koester, K. Andre Mkhoyan

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using scanning transmission electron microscopy (STEM) imaging and spectroscopy. Atomic-resolution high-angle annular dark-field (HAADF)-STEM images directly visualize the three-dimensional structure and evaluate the degree of anisotropy. STEM-electron energy loss spectroscopy is used to measure the dielectric response of BAs as a function of the number of layers. Finally, BAs degradation under different ambient environments is studied, highlighting high sensitivity to moisture in the air.

Original languageEnglish (US)
Pages (from-to)5988-5997
Number of pages10
JournalACS nano
Volume14
Issue number5
DOIs
StatePublished - May 26 2020

Keywords

  • 2D materials
  • EELS
  • HAADF-STEM
  • black arsenic
  • degradation
  • surface plasmon
  • thickness-dependent EELS

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 6

PubMed: MeSH publication types

  • Journal Article

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