Leakage modeling for devices with steep sub-threshold slope considering random threshold variations

Ayan Paul, Chaitanya Kshirsagar, Sachin S. Sapatnekar, Steven Koester, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we propose a generic approach to statistically model leakage variation of devices with steep sub-threshold slope caused by random threshold variations. Monte Carlo simulation results based on our model show less than 11% error in 6σ leakage current estimation compared to 65% error using conventional square root method. A design example based on SRAM bit line leakage issue is also presented to show the correctness of our model in a realistic circuit scenario. This general-purpose modeling technique could be a useful tool in estimating leakage in a variety emerging device technology.

Original languageEnglish (US)
Title of host publicationProceedings - 27th International Conference on VLSI Design, VLSID 2014; Held Concurrently with 13th International Conference on Embedded Systems Design
Pages399-404
Number of pages6
DOIs
StatePublished - Mar 3 2014
Event27th International Conference on VLSI Design, VLSID 2014 - Held Concurrently with 13th International Conference on Embedded Systems Design - Mumbai, India
Duration: Jan 5 2014Jan 9 2014

Publication series

NameProceedings of the IEEE International Conference on VLSI Design
ISSN (Print)1063-9667

Other

Other27th International Conference on VLSI Design, VLSID 2014 - Held Concurrently with 13th International Conference on Embedded Systems Design
CountryIndia
CityMumbai
Period1/5/141/9/14

Keywords

  • Leakage current
  • Monte Carlo simulation
  • SRAM
  • Statistical analysis
  • Sub-threshold slope

Fingerprint Dive into the research topics of 'Leakage modeling for devices with steep sub-threshold slope considering random threshold variations'. Together they form a unique fingerprint.

Cite this