Reliability mechanisms are undesirable from a product lifetime point of view, but their unique characteristics enable novel applications such as one-time-programmable memory, secure chip odometers, and physical unclonable functions (PUFs). In this invited paper, we will discuss how reliability mechanisms can be leveraged for the aforementioned applications, and then introduce a novel SRAM PUF design where the power up state of the SRAM cell is programmed into a local metal fuse using the electromigration phenomenon for improved stability.
|Original language||English (US)|
|Title of host publication||2019 IEEE International Electron Devices Meeting, IEDM 2019|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Dec 2019|
|Event||65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States|
Duration: Dec 7 2019 → Dec 11 2019
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||65th Annual IEEE International Electron Devices Meeting, IEDM 2019|
|Period||12/7/19 → 12/11/19|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported in part by the Semiconductor Research Corporation (SRC) and the Texas Analog Center of Excellence (TxACE).
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