Light-emitting devices based on ruthenium(ii)(4,7-diphenyl-1, 10-phenanthroline)3: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum

Jihua Yang, Keith C. Gordon, Yigal Zidon, Yoram Shapira

Research output: Contribution to journalArticlepeer-review

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Abstract

The fabrication of the light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenantholine)3 was presented. The effect of electron transport layer of tris-(8-hydroxyquinoline) aluminum on the device response rate and efficiency was also analyzed. Surface photovoltage spectroscopy was used to determine the charge transporting characteristics. The results show that enhanced electron injection at the interface led to improved device time and efficiency.

Original languageEnglish (US)
Pages (from-to)6391-6395
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number10
DOIs
StatePublished - Nov 15 2003

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