Light-emitting devices based on ruthenium(ii)(4,7-diphenyl-1, 10-phenanthroline)3: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum

Jihua Yang; Keith C. Gordon; Yigal Zidon; Yoram Shapira

doi:10.1063/1.1619576

Light-emitting devices based on ruthenium(ii)(4,7-diphenyl-1, 10-phenanthroline)₃: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum

Jihua Yang, Keith C. Gordon, Yigal Zidon, Yoram Shapira

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The fabrication of the light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenantholine)₃ was presented. The effect of electron transport layer of tris-(8-hydroxyquinoline) aluminum on the device response rate and efficiency was also analyzed. Surface photovoltage spectroscopy was used to determine the charge transporting characteristics. The results show that enhanced electron injection at the interface led to improved device time and efficiency.

Original language	English (US)
Pages (from-to)	6391-6395
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	10
DOIs	https://doi.org/10.1063/1.1619576
State	Published - Nov 15 2003
Externally published	Yes

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