TY - GEN
T1 - Light induced changes in the non-Gaussian noise statistics in doped hydrogenated amorphous silicon
AU - Fan, J.
AU - Kakalios, J.
PY - 1993
Y1 - 1993
N2 - The power spectrum of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) has been measured before and after metastable defect creation by light soaking. The average magnitude and spectral slope of the 1/f noise are not affected by illumination, however significant changes in the higher order statistics are observed. Associated with the decrease of conductivity upon light soaking (the Staebler-Wronski effect), there is a decrease in the correlation of the noise power which characterize the non-Gaussian noise in the annealed state. These changes in the noise statistics are reversible by annealing. The light-induced changes in the non-Gaussian statistics provide experimental support for models of light induced defect creation which involve long-ranged and many body interactions.
AB - The power spectrum of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) has been measured before and after metastable defect creation by light soaking. The average magnitude and spectral slope of the 1/f noise are not affected by illumination, however significant changes in the higher order statistics are observed. Associated with the decrease of conductivity upon light soaking (the Staebler-Wronski effect), there is a decrease in the correlation of the noise power which characterize the non-Gaussian noise in the annealed state. These changes in the noise statistics are reversible by annealing. The light-induced changes in the non-Gaussian statistics provide experimental support for models of light induced defect creation which involve long-ranged and many body interactions.
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U2 - 10.1557/proc-297-661
DO - 10.1557/proc-297-661
M3 - Conference contribution
AN - SCOPUS:0027811631
SN - 155899193X
SN - 9781558991934
T3 - Materials Research Society Symposium Proceedings
SP - 661
EP - 666
BT - Amorphous Silicon Technology
PB - Publ by Materials Research Society
T2 - Proceedings of the MRS Spring Meeting
Y2 - 13 April 1993 through 16 April 1993
ER -