Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

Fulin Xiong, Eric Ganz, A. G. Loeser, J. A. Golovchenko, Frans Spaepen

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400-450°C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase at the interface is a Au-Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular-beam evaporator. The resulting films revealed high-crystalline quality by in situ high-energy ion scattering and channeling analysis and ex situ by cross-sectional transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)3586-3588
Number of pages3
JournalApplied Physics Letters
Issue number27
StatePublished - 1991
Externally publishedYes

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