Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

Fulin Xiong; Eric Ganz; A. G. Loeser; J. A. Golovchenko; Frans Spaepen

doi:10.1063/1.105640

Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

Fulin Xiong, Eric Ganz, A. G. Loeser, J. A. Golovchenko, Frans Spaepen

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Abstract

We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400-450°C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase at the interface is a Au-Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular-beam evaporator. The resulting films revealed high-crystalline quality by in situ high-energy ion scattering and channeling analysis and ex situ by cross-sectional transmission electron microscopy.

Original language	English (US)
Pages (from-to)	3586-3588
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	27
DOIs	https://doi.org/10.1063/1.105640
State	Published - 1991
Externally published	Yes

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@article{36ef9fee8f2b40988f6e5fe486409e11,

title = "Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature",

abstract = "We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400-450°C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase at the interface is a Au-Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular-beam evaporator. The resulting films revealed high-crystalline quality by in situ high-energy ion scattering and channeling analysis and ex situ by cross-sectional transmission electron microscopy.",

author = "Fulin Xiong and Eric Ganz and Loeser, {A. G.} and Golovchenko, {J. A.} and Frans Spaepen",

year = "1991",

doi = "10.1063/1.105640",

language = "English (US)",

volume = "59",

pages = "3586--3588",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "27",

}

TY - JOUR

T1 - Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

AU - Xiong, Fulin

AU - Ganz, Eric

AU - Loeser, A. G.

AU - Golovchenko, J. A.

AU - Spaepen, Frans

PY - 1991

Y1 - 1991

N2 - We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400-450°C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase at the interface is a Au-Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular-beam evaporator. The resulting films revealed high-crystalline quality by in situ high-energy ion scattering and channeling analysis and ex situ by cross-sectional transmission electron microscopy.

AB - We demonstrate liquid-metal-mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400-450°C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor-liquid-solid mechanism. The liquid-metal phase at the interface is a Au-Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular-beam evaporator. The resulting films revealed high-crystalline quality by in situ high-energy ion scattering and channeling analysis and ex situ by cross-sectional transmission electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=36449002988&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449002988&partnerID=8YFLogxK

U2 - 10.1063/1.105640

DO - 10.1063/1.105640

M3 - Article

AN - SCOPUS:36449002988

SN - 0003-6951

VL - 59

SP - 3586

EP - 3588

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature

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