TY - JOUR
T1 - Long-range disorder and the Staebler-Wronski effect in N-type amorphous silicon
AU - Belich, T. J.
AU - Kakalios, James
PY - 2002/11/15
Y1 - 2002/11/15
N2 - Experimental measurements of the Q function (a comparison of the dark conductivity and thermopower activation energies) as a function of light exposure are reported for a variety of n-type-doped hydrogenated amorphous silicon films. The samples studied represent a wide range of deposition conditions, including variations of the deposition temperature, the rf power during deposition, and the doping ratio of phosphorus to silicon. The Q function of these films is measured before and after light-induced defect creation. No significant change in the Q function was observed after light-induced defect creation for any of these samples, consistent with no light-induced change in the long-range disorder at the conduction-band mobility edge. Measurements of the non-Gaussian statistics which characterize the conductance fluctuations (1/f noise) are also found to remain unchanged following light exposure.
AB - Experimental measurements of the Q function (a comparison of the dark conductivity and thermopower activation energies) as a function of light exposure are reported for a variety of n-type-doped hydrogenated amorphous silicon films. The samples studied represent a wide range of deposition conditions, including variations of the deposition temperature, the rf power during deposition, and the doping ratio of phosphorus to silicon. The Q function of these films is measured before and after light-induced defect creation. No significant change in the Q function was observed after light-induced defect creation for any of these samples, consistent with no light-induced change in the long-range disorder at the conduction-band mobility edge. Measurements of the non-Gaussian statistics which characterize the conductance fluctuations (1/f noise) are also found to remain unchanged following light exposure.
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U2 - 10.1103/PhysRevB.66.195212
DO - 10.1103/PhysRevB.66.195212
M3 - Article
AN - SCOPUS:0037113722
VL - 66
SP - 1952121
EP - 1952125
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 19
M1 - 195212
ER -