Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax

S. J. Koester; R. Hammond; J. O. Chu; P. M. Mooney; J. A. Ott; C. S. Webster; I. Lagnado; P. R. de la Houssaye

Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax

S. J. Koester, R. Hammond, J. O. Chu, P. M. Mooney, J. A. Ott, C. S. Webster, I. Lagnado, P. R. de la Houssaye

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si_0.2Ge_0.8/Si_0.7Ge_0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.

Original language	English (US)
Pages (from-to)	31-32
Number of pages	2
Journal	Annual Device Research Conference Digest
State	Published - Jan 1 2000

OpenUrl availability

Full text

Cite this

@article{f8e0a465016e4ea2b76c5a6984adca16,

title = "Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax",

abstract = "Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si0.2Ge0.8/Si0.7Ge0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.",

author = "Koester, {S. J.} and R. Hammond and Chu, {J. O.} and Mooney, {P. M.} and Ott, {J. A.} and Webster, {C. S.} and I. Lagnado and {de la Houssaye}, {P. R.}",

year = "2000",

month = jan,

day = "1",

language = "English (US)",

pages = "31--32",

journal = "Annual Device Research Conference Digest",

}

TY - JOUR

T1 - Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax

AU - Koester, S. J.

AU - Hammond, R.

AU - Chu, J. O.

AU - Mooney, P. M.

AU - Ott, J. A.

AU - Webster, C. S.

AU - Lagnado, I.

AU - de la Houssaye, P. R.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si0.2Ge0.8/Si0.7Ge0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.

AB - Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si0.2Ge0.8/Si0.7Ge0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0033650794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033650794&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033650794

SP - 31

EP - 32

JO - Annual Device Research Conference Digest

JF - Annual Device Research Conference Digest

ER -

Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax

Abstract

OpenUrl availability

Other files and links

Fingerprint

Cite this