Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si0.2Ge0.8/Si0.7Ge0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.
|Original language||English (US)|
|Number of pages||2|
|Journal||Annual Device Research Conference Digest|
|State||Published - Jan 1 2000|