Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric

Matthew J. Panzer, Christopher R. Newman, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

192 Scopus citations

Abstract

Large operating voltages are often required to switch organic field-effect transistors (OFETs) on and off because commonly used gate dielectric layers provide low capacitive coupling between the gate electrode and the semiconductor. We present here a pentacene OFET gated by a solution-deposited polymer electrolyte film in which the current was modulated over four orders of magnitude using gate voltages less than 2 V. A subthreshold slope of 180 mV per decade of current was observed during transistor turn on at a source-drain bias of -1 V; the estimated dielectric layer specific capacitance was 5 μF cm2. Sweep rate-dependent hysteresis may be attributed to a combination of ion migration and charge carrier trapping effects. Strategies to improve switching speeds for polymer electrolyte-gated OFETs are also discussed.

Original languageEnglish (US)
Article number103503
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
StatePublished - Mar 7 2005

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