Abstract
The luminescence properties of a new superlattice structure, called a n-i-p-i heterostructure, are described. The samples consist of GaAs quantum wells placed between alternately doped Al1-xGaxAs layers. The luminescence transitions between the quantized GaAs subbands are greatly influenced by the excitation-intensity-dependent electrostatic potential. The lowest subband luminescence transition agrees well with predictions for the ideal structure. In addition, distinct luminescence transitions from higher subbands are observed.
Original language | English (US) |
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Pages (from-to) | 7043-7046 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 33 |
Issue number | 10 |
DOIs | |
State | Published - 1986 |