Magnetoelectric device feasibility demonstration - Voltage control of exchange bias in perpendicular Cr2O3 Hall bar device

Zhengyang Zhao, Will Echtenkamp, Mike Street, Christian Binek, Jian Ping Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Several emerging mechanisms using voltage to control the magnetism have recently been proposed because of their possible applications in energy-efficient spintronic devices [1]. Among others, one promising way to reach this goal is to use voltage to control the exchange bias of the magnetoelectric (ME) antiferromagnet Cr2O3 (Fig. 1) [2]. In this work, we demonstrate the ME effect in the device level using a bilayer thin film structure Cr2O3/[Co/Pd]n.

Original languageEnglish (US)
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509028276
DOIs
StatePublished - Aug 22 2016
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: Jun 19 2016Jun 22 2016

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2016-August
ISSN (Print)1548-3770

Other

Other74th Annual Device Research Conference, DRC 2016
Country/TerritoryUnited States
CityNewark
Period6/19/166/22/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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