Several emerging mechanisms using voltage to control the magnetism have recently been proposed because of their possible applications in energy-efficient spintronic devices . Among others, one promising way to reach this goal is to use voltage to control the exchange bias of the magnetoelectric (ME) antiferromagnet Cr2O3 (Fig. 1) . In this work, we demonstrate the ME effect in the device level using a bilayer thin film structure Cr2O3/[Co/Pd]n.
|Original language||English (US)|
|Title of host publication||74th Annual Device Research Conference, DRC 2016|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Aug 22 2016|
|Event||74th Annual Device Research Conference, DRC 2016 - Newark, United States|
Duration: Jun 19 2016 → Jun 22 2016
|Name||Device Research Conference - Conference Digest, DRC|
|Other||74th Annual Device Research Conference, DRC 2016|
|Period||6/19/16 → 6/22/16|
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© 2016 IEEE.