Mass spectrometric analysis of a high pressure, inductively coupled plasma during diamond film growth

Peter G. Greuel, Hyun J. Yoon, Douglas W. Ernie, Jeffrey T. Roberts

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Determination of the gas phase composition at or near a substrate surface during plasma assisted chemical vapor deposition presents a challenging problem. The species located at a growing surface include highly reactive radicals which are difficult to detect in atmospheric plasma conditions. A system has been designed which consists of an inductively coupled rf plasma reactor linked to a quadrupole mass spectrometer (QMS) via a supersonic convergent-divergent nozzle. Differential pumping in the transient stages allows the plasma chamber to be operated at or near atmospheric pressures, while facilitating the detection of reactant species present in the growth boundary layer with the QMS.

Original languageEnglish (US)
Title of host publicationGas-Phase and Surface Chemistry in Electronic Materials Processing
PublisherPubl by Materials Research Society
Pages141-146
Number of pages6
ISBN (Print)1558992332
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume334
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

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