Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

Kevin F. Brennan, Enrico Bellotti, Maziar Farahmand, Joe Haralson, P. Paul Ruden, John D. Albrecht, Agust Sutandi

Research output: Contribution to journalConference articlepeer-review

37 Scopus citations

Abstract

In this paper we present a general methodology, materials theory based modeling, for predicting device performance in technologically immature materials that can proceed relatively independently of experiment. The models incorporated within this general approach extend from a fundamental physics based, microscopic analysis to macroscopic, engineering based device models. Using this scheme, we have investigated the transport and breakdown properties of several emerging wide band gap semiconductor materials, i.e. GaN, InN, 3C-SiC, and 4H-SiC. The carrier drift velocities, mobilities, and impact ionization coefficients for these materials can be predicted using the materials theory based modeling method. Using these results, device level simulations can then be made. Here we report Monte Carlo and selfconsistent charge control modeling of GaN based devices. Comparison to experimental measurements is made when possible. Good agreement between the selfconsistent charge control model calculations and experiment is obtained. Some of the issues pertinent to heterostructure bipolar transistor modeling of GaN are discussed.

Original languageEnglish (US)
Pages (from-to)195-204
Number of pages10
JournalSolid-State Electronics
Volume44
Issue number2
DOIs
StatePublished - Feb 1 2000
EventWorkshop on Wide Bandgap Bipolar Devices - Panama City Beach, FL, USA
Duration: Jan 24 1999Jan 28 1999

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