MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1-xInxAs

J. W. Dong; J. Lu; J. Q. Xie; L. C. Chen; R. D. James; S. McKernan; C. J. Palmstrom

doi:10.1016/S1386-9477(01)00131-X

MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga_1-xIn_xAs

J. W. Dong, J. Lu, J. Q. Xie, L. C. Chen, R. D. James, S. McKernan, C. J. Palmstrom

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Ferromagnetic Ni₂MnGa and Ni₂MnGe have been grown on GaAs(0 0 1) and Ni₂MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni₂MnGa on (001) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290K for Ni₂MnGa, Ni₂MnGe and Ni₂MnIn, repectively.

Original language	English (US)
Pages (from-to)	428-432
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	10
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00131-X
State	Published - May 2001

Bibliographical note

Funding Information:
This research was supported in part by Contract Nos. DARPA/ONR-N/N00014-99-1-1005, ONR-N/N00014-99-1-0233, AFOSR-F49620-98-1-0433, MRSEC Program of the National Science Foundation under Award Number DMR-9809364.

Keywords

Heusler alloys
MBE
Ni MnIn/InAs
NiMnGa/GaAs
NiMnGe/GaAs

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10.1016/S1386-9477(01)00131-X

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@article{79687f4b0eab40dcb187b7d0f0f66a47,

title = "MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1-xInxAs",

abstract = "Ferromagnetic Ni2MnGa and Ni2MnGe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni2MnGa on (001) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290K for Ni2MnGa, Ni2MnGe and Ni2MnIn, repectively.",

keywords = "Heusler alloys, MBE, Ni MnIn/InAs, NiMnGa/GaAs, NiMnGe/GaAs",

author = "Dong, {J. W.} and J. Lu and Xie, {J. Q.} and Chen, {L. C.} and James, {R. D.} and S. McKernan and Palmstrom, {C. J.}",

note = "Funding Information: This research was supported in part by Contract Nos. DARPA/ONR-N/N00014-99-1-1005, ONR-N/N00014-99-1-0233, AFOSR-F49620-98-1-0433, MRSEC Program of the National Science Foundation under Award Number DMR-9809364. ",

year = "2001",

month = may,

doi = "10.1016/S1386-9477(01)00131-X",

language = "English (US)",

volume = "10",

pages = "428--432",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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publisher = "Elsevier",

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TY - JOUR

T1 - MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1-xInxAs

AU - Dong, J. W.

AU - Lu, J.

AU - Xie, J. Q.

AU - Chen, L. C.

AU - James, R. D.

AU - McKernan, S.

AU - Palmstrom, C. J.

N1 - Funding Information: This research was supported in part by Contract Nos. DARPA/ONR-N/N00014-99-1-1005, ONR-N/N00014-99-1-0233, AFOSR-F49620-98-1-0433, MRSEC Program of the National Science Foundation under Award Number DMR-9809364.

PY - 2001/5

Y1 - 2001/5

N2 - Ferromagnetic Ni2MnGa and Ni2MnGe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni2MnGa on (001) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290K for Ni2MnGa, Ni2MnGe and Ni2MnIn, repectively.

AB - Ferromagnetic Ni2MnGa and Ni2MnGe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni2MnGa on (001) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290K for Ni2MnGa, Ni2MnGe and Ni2MnIn, repectively.

KW - Heusler alloys

KW - MBE

KW - Ni MnIn/InAs

KW - NiMnGa/GaAs

KW - NiMnGe/GaAs

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EP - 432

JO - Physica E: Low-Dimensional Systems and Nanostructures

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