Medium range order and 1/f noise in hydrogenated silicon thin films

T. J. Belich, J. Kakalios

Research output: Contribution to journalConference articlepeer-review

Abstract

Measurements of the second spectra and correlation coefficients of conductance fluctuations are reported for a series of n-type doped a-Si:H films for which the deposition conditions are systematically varied. The non-Gaussian character of the 1/f noise is found to decrease with decreasing deposition temperature, which is also correlated with an increase in the difference between the conductivity and thermopower activation energies (the Q-function). The decrease in non-Gaussian statistics is interpreted as a decrease in the interactions between inhomogeneous current filaments due to increasing long-range disorder in the material.

Original languageEnglish (US)
Pages (from-to)287-292
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume715
DOIs
StatePublished - 2002
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: Apr 2 2002Apr 5 2002

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