Metastable structures in the initial stages of Si homoepitaxy

Brian Borovsky; Michael Krueger; Eric Ganz

doi:10.1142/S0218625X98001420

Metastable structures in the initial stages of Si homoepitaxy

Brian Borovsky, Michael Krueger, Eric Ganz

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We discuss the growth of the first six atoms of an epitaxial Si island on Si(001). The nucleation of a six-atom island is observed to rely on a conversion between two metastable four-atom structures. These results suggest that metastable configurations play an important role in epitaxial growth.

Original language	English (US)
Pages (from-to)	1053-1056
Number of pages	4
Journal	Surface Review and Letters
Volume	5
Issue number	5
DOIs	https://doi.org/10.1142/S0218625X98001420
State	Published - 1998

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title = "Metastable structures in the initial stages of Si homoepitaxy",

abstract = "We discuss the growth of the first six atoms of an epitaxial Si island on Si(001). The nucleation of a six-atom island is observed to rely on a conversion between two metastable four-atom structures. These results suggest that metastable configurations play an important role in epitaxial growth.",

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AU - Borovsky, Brian

AU - Krueger, Michael

AU - Ganz, Eric

PY - 1998

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AB - We discuss the growth of the first six atoms of an epitaxial Si island on Si(001). The nucleation of a six-atom island is observed to rely on a conversion between two metastable four-atom structures. These results suggest that metastable configurations play an important role in epitaxial growth.

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Metastable structures in the initial stages of Si homoepitaxy

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