A technique for obtaining micromachined and surface treated single crystals SrTiO 3(STO) which doubles as substrate and gate dielectric, was discussed. The surface charge densities suitable for electrostatic doping of films were obtained at low temperatures using a capacitor geometry. The off-diagonal component of strain due to the applied electric field was also measured. The nonlinear dependence of the induced carrier density on the electric field indicated the electric field dependence of the capacitance. The results show that the electrostriction saturates below the measured breakdown fields.
Bibliographical noteFunding Information:
This work was supported by the National Science Foundation under Grant No. NSF/DMR-0138209 and by the University of Minnesota MRSEC (NSF/DMR-0212032). M.E.-Z. is supported by a NSF Graduate Research Fellowship.