Microwave Frequency Operation of the Heterostructure Hot-Electron Diode

J. Kolodzey; J. Laskar; T. K. Higman; M. A. Emanuel; James J. Coleman; Karl Hess

doi:10.1109/55.714

Microwave Frequency Operation of the Heterostructure Hot-Electron Diode

J. Kolodzey, J. Laskar, T. K. Higman, M. A. Emanuel, James J. Coleman, Karl Hess

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report the first generation of microwave frequencies by the heterostructure hot-electron diode (H2ED). At 77 K, self-oscillations have been produced over a broad frequency range from direct current to 10.5 GHz, limited by the parasitic series resistance and capacitance. Considerations of the bias polarity required to produce oscillations and of their high-frequency response support a model of switching from tunneling to thermionic emission.

Original language	English (US)
Pages (from-to)	272-274
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/55.714
State	Published - 1988

Bibliographical note

Funding Information:
Manuscript received February 5, 1988. This work was supported in part by the National Science Foundation Engineering Research Center for Compound Semiconductor Microelectronics, and the Joint Services Electronics Program. The authors are with the Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, IL 61801. IEEE Log Number 8821310.

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title = "Microwave Frequency Operation of the Heterostructure Hot-Electron Diode",

abstract = "We report the first generation of microwave frequencies by the heterostructure hot-electron diode (H2ED). At 77 K, self-oscillations have been produced over a broad frequency range from direct current to 10.5 GHz, limited by the parasitic series resistance and capacitance. Considerations of the bias polarity required to produce oscillations and of their high-frequency response support a model of switching from tunneling to thermionic emission.",

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AU - Kolodzey, J.

AU - Laskar, J.

AU - Higman, T. K.

AU - Emanuel, M. A.

AU - Coleman, James J.

AU - Hess, Karl

N1 - Funding Information: Manuscript received February 5, 1988. This work was supported in part by the National Science Foundation Engineering Research Center for Compound Semiconductor Microelectronics, and the Joint Services Electronics Program. The authors are with the Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, IL 61801. IEEE Log Number 8821310.

PY - 1988

Y1 - 1988

N2 - We report the first generation of microwave frequencies by the heterostructure hot-electron diode (H2ED). At 77 K, self-oscillations have been produced over a broad frequency range from direct current to 10.5 GHz, limited by the parasitic series resistance and capacitance. Considerations of the bias polarity required to produce oscillations and of their high-frequency response support a model of switching from tunneling to thermionic emission.

AB - We report the first generation of microwave frequencies by the heterostructure hot-electron diode (H2ED). At 77 K, self-oscillations have been produced over a broad frequency range from direct current to 10.5 GHz, limited by the parasitic series resistance and capacitance. Considerations of the bias polarity required to produce oscillations and of their high-frequency response support a model of switching from tunneling to thermionic emission.

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Microwave Frequency Operation of the Heterostructure Hot-Electron Diode

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