Microwave-induced resistance oscillations in a back-gated GaAs quantum well

X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov, Q. Qian, J. D. Watson, M. J. Manfra

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16 Scopus citations

Abstract

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov-de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

Original languageEnglish (US)
Article number235415
JournalPhysical Review B
Volume95
Issue number23
DOIs
StatePublished - Jun 9 2017

Bibliographical note

Funding Information:
The work at Minnesota (Purdue) was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. ER 46640-SC0002567 (DE-SC0006671).

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