Minority electron mobility and lifetime in the p+GaAs base of AlGaAs/GaAs heterojunction bipolar transistors

D. M. Kim, S. Lee, M. I. Nathan, A. Gopinath, F. Williamson, K. Beyzavi, A. Ghiasi

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AlGaAs/GaAs heterojunction bipolar transistors with different base doping concentrations grown by gas source molecular beam epitaxy were fabricated and characterized at dc and high frequency. Three different base doping concentrations; 5×1018, 1×1019, and 5×1019 cm-3 doped with Be were used for the characterization with the same structural and process parameters, including 0.2 μm base width. Minority electron mobilities in heavily doped p type were measured as 1.1×103, 1.3×103, and 3×103 cm2 V/s for 5×1018, 1×1019, and 5×1019 cm-3, respectively, by using the current gain cutoff frequency (fT) which agrees well with theoretical predictions in heavily doped p-type GaAs. Combining dc and high frequency measurements, electron lifetimes of 1.2×10 -9, 5.5×10-10, and 2×10-11 s have been obtained for these three dopings, respectively.

Original languageEnglish (US)
Pages (from-to)861-863
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - Dec 1 1993


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