TY - GEN
T1 - Mitigation of common-mode noise in wide band gap device based motor drives
AU - Narasimhan, Sneha
AU - Tewari, Saurabh
AU - Severson, Eric
AU - Baranwal, Rohit
AU - Mohan, Ned
PY - 2016/5/10
Y1 - 2016/5/10
N2 - MOSFETs built using wide band gap (WBG) materials offer numerous benefits to power electronic circuits. These benefits are quite apparent in applications requiring breakdown voltages ≥ 600V, where Silicon IGBTs are typically used due to their combination of high breakdown voltage and low conduction losses. Compared to Silicon IGBTs, WBG MOSFETs offer very short turn-ON and turn-OFF times, which reduce switching losses and enable significantly higher switching frequencies. This paper explores the application of WBG MOSFETs to motor drives, where higher switching frequencies reduce motor losses and torque ripple and allow higher control bandwidth, thus enabling greater output frequencies needed to operate motors at higher speeds. Specifically, two-level voltage source inverters utilizing Silicon Carbide (SiC) MOSFETs are constructed to operate a 1 HP induction motor. Experimental results are presented which show that the short turn-ON and turn-OFF transients as well as high switching frequencies lead to increased shaft voltage and conducted ground currents. Mitigation techniques are implemented and evaluated, including clamp-on ferrites and an open-end winding drive implementation. The shaft voltage and ground currents are found to be best suppressed in an open-end winding drive utilizing clamp-on ferrites.
AB - MOSFETs built using wide band gap (WBG) materials offer numerous benefits to power electronic circuits. These benefits are quite apparent in applications requiring breakdown voltages ≥ 600V, where Silicon IGBTs are typically used due to their combination of high breakdown voltage and low conduction losses. Compared to Silicon IGBTs, WBG MOSFETs offer very short turn-ON and turn-OFF times, which reduce switching losses and enable significantly higher switching frequencies. This paper explores the application of WBG MOSFETs to motor drives, where higher switching frequencies reduce motor losses and torque ripple and allow higher control bandwidth, thus enabling greater output frequencies needed to operate motors at higher speeds. Specifically, two-level voltage source inverters utilizing Silicon Carbide (SiC) MOSFETs are constructed to operate a 1 HP induction motor. Experimental results are presented which show that the short turn-ON and turn-OFF transients as well as high switching frequencies lead to increased shaft voltage and conducted ground currents. Mitigation techniques are implemented and evaluated, including clamp-on ferrites and an open-end winding drive implementation. The shaft voltage and ground currents are found to be best suppressed in an open-end winding drive utilizing clamp-on ferrites.
KW - common-mode voltage
KW - electromagnetic interference
KW - gallium nitride
KW - open-end drive
KW - silicon carbide
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U2 - 10.1109/APEC.2016.7468148
DO - 10.1109/APEC.2016.7468148
M3 - Conference contribution
AN - SCOPUS:84973664413
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2043
EP - 2050
BT - 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016
Y2 - 20 March 2016 through 24 March 2016
ER -