Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs

Stephen W. Bedell; Amlan Majumdar; John A. Ott; John Arnold; Keith Fogel; Steven J. Koester; Devendra K. Sadana

doi:10.1109/LED.2008.2000713

Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs

Stephen W. Bedell, Amlan Majumdar, John A. Ott, John Arnold, Keith Fogel, Steven J. Koester, Devendra K. Sadana

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.

Original language	English (US)
Pages (from-to)	811-813
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	7
DOIs	https://doi.org/10.1109/LED.2008.2000713
State	Published - Jul 2008

Keywords

Germanium
MOSFET
Silicon-germanium-on-insulator (SGOI)
Strain

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title = "Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs",

abstract = "The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.",

keywords = "Germanium, MOSFET, Silicon-germanium-on-insulator (SGOI), Strain",

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AU - Bedell, Stephen W.

AU - Majumdar, Amlan

AU - Ott, John A.

AU - Arnold, John

AU - Fogel, Keith

AU - Koester, Steven J.

AU - Sadana, Devendra K.

PY - 2008/7

Y1 - 2008/7

N2 - The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.

AB - The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.

KW - Germanium

KW - MOSFET

KW - Silicon-germanium-on-insulator (SGOI)

KW - Strain

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Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs

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Keywords

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