Model for spin injection into conjugated organic semiconductors

P P Ruden, Darryl L. Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a theoretical model to describe electrical spin injection from a ferromagnetic metal contact into a conjugated organic semiconductor. To achieve significant spin current, the organic semiconductor must be driven far out of local thermal equilibrium by an electric current. Effective spin injection therefore requires that equilibration between the conjugated organic semiconductor and the metallic contact be suppressed by an energy barrier to injection that may be due either to a large Schottky barrier or to an insulating tunnel barrier. The results are compared with simulations for a silicon based device structure. Detection of the injected spin current in the organic semiconductor is also addressed.

Original languageEnglish (US)
Title of host publicationSemiconductor Spintronics
Pages19-24
Number of pages6
Volume825
StatePublished - Dec 1 2004
Event2004 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 12 2004Apr 16 2004

Other

Other2004 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/12/044/16/04

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