Abstract
We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k·p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.
Original language | English (US) |
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Title of host publication | EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 101-104 |
Number of pages | 4 |
ISBN (Electronic) | 9781479969111 |
DOIs | |
State | Published - Mar 18 2015 |
Event | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: Jan 26 2015 → Jan 28 2015 |
Publication series
Name | EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
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Other
Other | 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 |
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Country/Territory | Italy |
City | Bologna |
Period | 1/26/15 → 1/28/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- DFT
- III-V compounds
- band-structure