Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer

ChengLin Zheng, S. Riki Banerjee, Rhonda F. Drayton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

An irregular non-planar transition effect, that connects a 50Ω microstrip to a 16Ω partially shielded valley microstrip, is studied. The transition effect is modeled using LCT-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz.

Original languageEnglish (US)
Title of host publication2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages89-92
Number of pages4
DOIs
StatePublished - 2006
Event2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States
Duration: Jan 18 2006Jan 20 2006

Publication series

Name2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume2006

Conference

Conference2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
CountryUnited States
CitySan Diego, CA
Period1/18/061/20/06

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