Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs

J. W. Dong, L. C. Chen, C. J. Palmstrøm, R. D. James, S. McKernan

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The exceptionally large magnetoresistance of the ferromagnetic shape memory alloy Ni2MnGa makes thin films of this material promising candidates for applications in microelectromechanical systems. The growth of such films by on (001) GaAs substrates by molecular beam epitaxy was investigated. In situ RHEED, ex situ X-ray diffraction and TEM selective area electron diffraction show that the grown films are single crystals of a pseudomorphic tetragonal phase. The ferromagnetic nature of the films was confirmed by both vibrating sample and SQUID magnetometry, demonstrating a Curie temperature around 320 K.

Original languageEnglish (US)
Pages (from-to)1443-1445
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - Sep 6 1999


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