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Abstract
The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO2 films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO2 (101) films on r-sapphire (10 1 ¯ 2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900°C. Three distinct growth regimes were identified where SnO2 films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.
Original language | English (US) |
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Article number | 020606 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 33 |
Issue number | 2 |
DOIs | |
State | Published - Mar 1 2015 |
Bibliographical note
Publisher Copyright:© 2015 American Vacuum Society.
How much support was provided by MRSEC?
- Shared
Reporting period for MRSEC
- Period 1
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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Goldman, A. M., Greven, M., Jalan, B., Koester, S. J., He, T., Jeong, J. S., Koirala, S., Paul, A., Thoutam, L. R. & Yu, G.
9/1/98 → …
Project: Research project
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MRSEC Program
THE NATIONAL SCIENCE FOUNDATION, UNIVERSITY OF TEXAS RIO GRANDE VALLEY
8/1/98 → 10/31/20
Project: Research project