Monolithic pixel sensors in deep-submicron SOI Technology

M. Battaglia, D. Bisello, D. Contarato, P. Denes, P. Giubilato, L. Glesener, S. Mattiazzo, C. Q. Vu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 μm FD-SOI process, featuring analog and digital pixels on a 10 μm pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 μm FD-SOI process are briefly discussed.

Original languageEnglish (US)
Article numberP04007
JournalJournal of Instrumentation
Issue number4
StatePublished - Nov 17 2009


  • Particle tracking detectors
  • Solid state detectors

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