TY - JOUR
T1 - Monte Carlo calculation of high- and low-field AlxGa1-xN electron transport characteristics
AU - Albrecht, J. D.
AU - Wang, R.
AU - Ruden, P. P.
AU - Farahmand, M.
AU - Bellotti, E.
AU - Brennan, K. F.
PY - 1997
Y1 - 1997
N2 - The Monte Carlo technique is used to simulate electron transport in bulk, wurtzite phase AlxGa1-xN. A multi-valley analytical band model consisting of five spherical, non-parabolic conduction band valleys at the Γ, U, M, and K symmetry points of the Brillouin zone is matched to band structures of GaN and AlN. Parameters for the AlxGa1-xN alloy are obtained by linear interpolation. The Monte Carlo simulations are performed for ambient temperatures in the range of 300 K to 600 K. Scattering mechanisms taken into account include ionized impurity scattering and alloy scattering, in addition to deformation potential scattering (intra- and inter-valley), and polar optical phonon scattering. We present results for the electron steady-state drift velocity and the valley occupancy for electric fields up to 500 kV/cm. Low-field drift mobilities are extracted from the Monte Carlo calculations as functions of the electron concentration, of the ambient temperature, and of the alloy composition.
AB - The Monte Carlo technique is used to simulate electron transport in bulk, wurtzite phase AlxGa1-xN. A multi-valley analytical band model consisting of five spherical, non-parabolic conduction band valleys at the Γ, U, M, and K symmetry points of the Brillouin zone is matched to band structures of GaN and AlN. Parameters for the AlxGa1-xN alloy are obtained by linear interpolation. The Monte Carlo simulations are performed for ambient temperatures in the range of 300 K to 600 K. Scattering mechanisms taken into account include ionized impurity scattering and alloy scattering, in addition to deformation potential scattering (intra- and inter-valley), and polar optical phonon scattering. We present results for the electron steady-state drift velocity and the valley occupancy for electric fields up to 500 kV/cm. Low-field drift mobilities are extracted from the Monte Carlo calculations as functions of the electron concentration, of the ambient temperature, and of the alloy composition.
UR - http://www.scopus.com/inward/record.url?scp=0031346901&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031346901&partnerID=8YFLogxK
U2 - 10.1557/proc-482-815
DO - 10.1557/proc-482-815
M3 - Conference article
AN - SCOPUS:0031346901
SN - 0272-9172
VL - 482
SP - 815
EP - 820
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1997 MRS Fall Meeting
Y2 - 30 November 1997 through 4 December 1997
ER -