Monte Carlo calculation of hole transport in bulk zincblende phase of GaN including a pseudopotential calculated band structure

I. H. Oguzman, J. Kolnik, K. F. Brennan, R. Wang, P. P. Ruden

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

In this paper, we present ensemble Monte Carlo based calculations of the steady state hole transport properties, i.e. average energy, drift velocity, and band occupancy of zincblende GaN. The Monte Carlo calculation includes the full details of the valence bands and a numerically determined scattering rate derived from an empirical pseudopotential calculation. Calculations are made for electric field strengths up to 1000 kV/cm. It is found that the average hole energies are much lower than the corresponding electron energies at comparable electric field strengths, and that some anisotropy in the drift velocity and average energy appears at the higher fields examined here.

Original languageEnglish (US)
Pages (from-to)479-484
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

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