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Abstract
With strong light-matter interaction in their atomically thin layered structures, two-dimensional (2D) materials have been widely investigated for optoelectronic applications such as photodetectors and photovoltaic devices. Depending on the aim of optoelectronic applications, different device structures have been employed. Lateral phototransistor structures have been employed for high optical gain, while vertical photodiode structures have been employed for fast response and low power operation. Herein, we demonstrate a multimodal photodetector platform based on 2D materials, combining both a phototransistor and a photodiode and taking the corresponding desirable characteristics from each structure within a single device. In this platform, a multilayered transition-metal dichalcogenide flake is transferred on top of metal electrodes, and a transparent gate electrode is employed. The channel region of the flake between electrodes operates as a phototransistor providing a high gain mode, while the electrode region in the same flake operates as a vertical Schottky photodiode providing a fast response mode. These modes can be dynamically selected by controlling the drain voltage and gate voltage.
Original language | English (US) |
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Pages (from-to) | 10500-10506 |
Number of pages | 7 |
Journal | ACS nano |
Volume | 10 |
Issue number | 11 |
DOIs | |
State | Published - Nov 22 2016 |
Bibliographical note
Publisher Copyright:© 2016 American Chemical Society.
Keywords
- 2D materials
- multimodal
- photodiode
- phototransistor
- Schottky barrier
How much support was provided by MRSEC?
- Partial
Reporting period for MRSEC
- Period 3
PubMed: MeSH publication types
- Journal Article
Fingerprint
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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Goldman, A. M., Greven, M., Jalan, B., Koester, S. J., He, T., Jeong, J. S., Koirala, S., Paul, A., Thoutam, L. R. & Yu, G.
9/1/98 → …
Project: Research project
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