Nano CMOS device quantum simulation: Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Tony Low, M. F. Li, Chen Shen, Yee Chia Yeo, Y. T. Hou, Chunxiang Zhu, Albert Chin, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceeding › Chapter

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Engineering & Materials Science