Natural buffer layer in DyBa2Cu3O7-x films grown on Si by molecular beam epitaxy

C. A. Nordman, T. Wang, N. Chandrasekhar, K. M. Beauchamp, V. S. Achutharaman, R. K. Schulze, G. C. Spalding, Z. H. Lin, J. F. Evans, A. M. Goldman

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Growth of a natural buffer layer has been observed for DyBa 2Cu3O7-x films grown on Si substrates. The best DyBa2Cu3O7-x film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-Å thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa2Cu3O7-x film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-Å amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 Å of chemical interdiffusion.

Original languageEnglish (US)
Pages (from-to)5697-5699
Number of pages3
JournalJournal of Applied Physics
Issue number10
StatePublished - 1991


Dive into the research topics of 'Natural buffer layer in DyBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> films grown on Si by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this