Natural buffer layer in DyBa2Cu3O7-x films grown on Si by molecular beam epitaxy

C. A. Nordman; T. Wang; N. Chandrasekhar; K. M. Beauchamp; V. S. Achutharaman; R. K. Schulze; G. C. Spalding; Z. H. Lin; J. F. Evans; A. M. Goldman

doi:10.1063/1.350189

Natural buffer layer in DyBa₂Cu₃O_7-x films grown on Si by molecular beam epitaxy

C. A. Nordman, T. Wang, N. Chandrasekhar, K. M. Beauchamp, V. S. Achutharaman, R. K. Schulze, G. C. Spalding, Z. H. Lin, J. F. Evans, A. M. Goldman

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Abstract

Growth of a natural buffer layer has been observed for DyBa ₂Cu₃O_7-x films grown on Si substrates. The best DyBa₂Cu₃O_7-x film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-Å thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa₂Cu₃O_7-x film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-Å amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 Å of chemical interdiffusion.

Original language	English (US)
Pages (from-to)	5697-5699
Number of pages	3
Journal	Journal of Applied Physics
Volume	70
Issue number	10
DOIs	https://doi.org/10.1063/1.350189
State	Published - 1991

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title = "Natural buffer layer in DyBa2Cu3O7-x films grown on Si by molecular beam epitaxy",

abstract = "Growth of a natural buffer layer has been observed for DyBa 2Cu3O7-x films grown on Si substrates. The best DyBa2Cu3O7-x film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-{\AA} thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa2Cu3O7-x film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-{\AA} amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 {\AA} of chemical interdiffusion.",

author = "Nordman, {C. A.} and T. Wang and N. Chandrasekhar and Beauchamp, {K. M.} and Achutharaman, {V. S.} and Schulze, {R. K.} and Spalding, {G. C.} and Lin, {Z. H.} and Evans, {J. F.} and Goldman, {A. M.}",

year = "1991",

doi = "10.1063/1.350189",

language = "English (US)",

volume = "70",

pages = "5697--5699",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Natural buffer layer in DyBa2Cu3O7-x films grown on Si by molecular beam epitaxy

AU - Nordman, C. A.

AU - Wang, T.

AU - Chandrasekhar, N.

AU - Beauchamp, K. M.

AU - Achutharaman, V. S.

AU - Schulze, R. K.

AU - Spalding, G. C.

AU - Lin, Z. H.

AU - Evans, J. F.

AU - Goldman, A. M.

PY - 1991

Y1 - 1991

N2 - Growth of a natural buffer layer has been observed for DyBa 2Cu3O7-x films grown on Si substrates. The best DyBa2Cu3O7-x film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-Å thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa2Cu3O7-x film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-Å amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 Å of chemical interdiffusion.

AB - Growth of a natural buffer layer has been observed for DyBa 2Cu3O7-x films grown on Si substrates. The best DyBa2Cu3O7-x film, grown by molecular beam epitaxy with ozone as a source of activated oxygen, was 2300-Å thick, highly c-axis oriented, and had a resistive-transition onset at 90 K and zero resistance by 70 K. The natural buffer layer, which grew at the interface of the DyBa2Cu3O7-x film and the Si substrate, consisted of Si, Ba, and O. Transmission electron microscopy on this film revealed a 150-Å amorphous layer, whereas Auger electron spectroscopy depth profiling showed 400 Å of chemical interdiffusion.

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JO - Journal of Applied Physics

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Natural buffer layer in DyBa₂Cu₃O_7-x films grown on Si by molecular beam epitaxy

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