Nearest neighbor hopping in Cd0.83Mn0.17Te:In, controlled by persistent photoconductivity

C. Leighton, I. Terry, P. Becla

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We have measured the temperature dependence of the electrical resistivity of a sample of the dilute magnetic persistent photoconductor Cd1-xMnxTe:In (x = 0.17) as a function of persistent photocarrier concentration. We observe a resistivity with the form ρ = ρ3 exp(E3/kBT) over the temperature range investigated (20-4 K), where E3 and ρ3 vary with the carrier density in a manner that suggests a nearest neighbor hopping transport mechanism. Magnetotransport measurements have also been made and we observe an anisotropic negative magnetoresistance (MR) at higher temperatures, which crosses over to a MR that is positive, and essentially isotropic, at low temperatures. We interpret this behavior as a cross over from a mechanism that is sensitive to the length of the nearest neighbor hop (an `orbital' effect) to a situation where the interaction between the localized electron and the magnetic ions of the host becomes important.

Original languageEnglish (US)
Pages (from-to)531-536
Number of pages6
JournalSolid State Communications
Issue number10
StatePublished - May 11 1999

Bibliographical note

Copyright 2017 Elsevier B.V., All rights reserved.

Fingerprint Dive into the research topics of 'Nearest neighbor hopping in Cd<sub>0.83</sub>Mn<sub>0.17</sub>Te:In, controlled by persistent photoconductivity'. Together they form a unique fingerprint.

Cite this