Negative magnetoresistance of organic field effect transistors

Masaya Nishioka, Yeon Bae Lee, A. M. Goldman, Yu Xia, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The magnetoresistance (MR) of organic field effect transistors has been studied. Both pentacene film and tetracene single crystal devices exhibit negative MRs of up to 0.57% at 9 T. This effect has been observed between 150 and 300 K and is temperature dependent. The phenomenon may result from the action of the magnetic field on the hopping transport of carriers. However, the possibility of a magnetocapacitance effect that would increase the number of carriers cannot be ruled out.

Original languageEnglish (US)
Article number092117
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
StatePublished - Sep 7 2007

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