Negative magnetoresistance of organic field effect transistors

Masaya Nishioka; Yeon Bae Lee; A. M. Goldman; Yu Xia; C. Daniel Frisbie

doi:10.1063/1.2775808

Negative magnetoresistance of organic field effect transistors

Masaya Nishioka, Yeon Bae Lee, A. M. Goldman, Yu Xia, C. Daniel Frisbie

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Abstract

The magnetoresistance (MR) of organic field effect transistors has been studied. Both pentacene film and tetracene single crystal devices exhibit negative MRs of up to 0.57% at 9 T. This effect has been observed between 150 and 300 K and is temperature dependent. The phenomenon may result from the action of the magnetic field on the hopping transport of carriers. However, the possibility of a magnetocapacitance effect that would increase the number of carriers cannot be ruled out.

Original language	English (US)
Article number	092117
Journal	Applied Physics Letters
Volume	91
Issue number	9
DOIs	https://doi.org/10.1063/1.2775808
State	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation through the University of Minnesota Material Research Science and Engineering Center under Grant No. NSF/DMR-0212032.

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title = "Negative magnetoresistance of organic field effect transistors",

abstract = "The magnetoresistance (MR) of organic field effect transistors has been studied. Both pentacene film and tetracene single crystal devices exhibit negative MRs of up to 0.57% at 9 T. This effect has been observed between 150 and 300 K and is temperature dependent. The phenomenon may result from the action of the magnetic field on the hopping transport of carriers. However, the possibility of a magnetocapacitance effect that would increase the number of carriers cannot be ruled out.",

author = "Masaya Nishioka and Lee, {Yeon Bae} and Goldman, {A. M.} and Yu Xia and Frisbie, {C. Daniel}",

note = "Funding Information: This work was supported by the National Science Foundation through the University of Minnesota Material Research Science and Engineering Center under Grant No. NSF/DMR-0212032.",

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AU - Nishioka, Masaya

AU - Lee, Yeon Bae

AU - Goldman, A. M.

AU - Xia, Yu

AU - Frisbie, C. Daniel

N1 - Funding Information: This work was supported by the National Science Foundation through the University of Minnesota Material Research Science and Engineering Center under Grant No. NSF/DMR-0212032.

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Y1 - 2007

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AB - The magnetoresistance (MR) of organic field effect transistors has been studied. Both pentacene film and tetracene single crystal devices exhibit negative MRs of up to 0.57% at 9 T. This effect has been observed between 150 and 300 K and is temperature dependent. The phenomenon may result from the action of the magnetic field on the hopping transport of carriers. However, the possibility of a magnetocapacitance effect that would increase the number of carriers cannot be ruled out.

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Negative magnetoresistance of organic field effect transistors

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