NEGF analysis of InGaAs schottky barrier double gate MOSFETs

Himadri S. Pal, Tony Low, Mark S. Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

A systematic study of InGaAs metallic source/drain Schottky barrier (SB) FET is conducted from a structural and material perspective by comparing it with InGaAs MOSFET and Si SBFET counterparts. The InGaAs SBFET exhibits a superior subthreshold swing compared to its Si counterpart due to its smaller transport mass. The contrary occurs at smaller channel length, demonstrating that InGaAs SBFETs are not as scalable. Since these devices exhibit different subthreshold and transconductance properties, their relative device advantage depends on the operating condition. We demonstrate that there is a window where the ION of an InGaAs SBFET can outperform its InGaAs MOSFET and Si SBFET counterparts.

Original languageEnglish (US)
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: Dec 15 2008Dec 17 2008

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/15/0812/17/08

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