New directions in GaN photonics enabled by electrochemical processes

C. Zhang, G. Yuan, K. Xiong, Sung Hyun Park, J. Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We have developed a novel conductivity based selective electrochemical etching to introduce nanometer sized pores into GaN. The nanoporous (NP) GaN can be considered as a new form of GaN with an unprecedented tunability in optical index. The advantages of NP-GaN for both edge-emitting laser diodes and vertical surface-emitting laser diodes (VCSEL) are subsequently exhibited.

Original languageEnglish (US)
Title of host publicationWide Bandgap Semiconductor Materials and Devices 17
EditorsJ. M. Zavada, S. Jang, J. K. Hite, V. Chakrapani, T. J. Anderson
PublisherElectrochemical Society Inc.
Pages47-56
Number of pages10
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2016
Externally publishedYes
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting - San Diego, United States
Duration: May 29 2016Jun 2 2016

Publication series

NameECS Transactions
Number5
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period5/29/166/2/16

Bibliographical note

Funding Information:
This research was supported by the National Science Foundation (NSF) under Award CMMI-1129964, and facilities used were supported by Yale SEAS cleanroom, YINQE, and NSF MRSEC DMR-1119826. We acknowledge Prof. Arto Nurmikko and Dr. Joonhee Lee at Brown University for their kind help with wafer dicing and discussions of optical measurement.

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