Abstract
We have developed a novel conductivity based selective electrochemical etching to introduce nanometer sized pores into GaN. The nanoporous (NP) GaN can be considered as a new form of GaN with an unprecedented tunability in optical index. The advantages of NP-GaN for both edge-emitting laser diodes and vertical surface-emitting laser diodes (VCSEL) are subsequently exhibited.
Original language | English (US) |
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Title of host publication | Wide Bandgap Semiconductor Materials and Devices 17 |
Editors | J. M. Zavada, V. Chakrapani, S. Jang, T. J. Anderson, J. K. Hite |
Publisher | Electrochemical Society Inc. |
Pages | 47-56 |
Number of pages | 10 |
Edition | 5 |
ISBN (Electronic) | 9781607687153 |
DOIs | |
State | Published - 2016 |
Externally published | Yes |
Event | Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting - San Diego, United States Duration: May 29 2016 → Jun 2 2016 |
Publication series
Name | ECS Transactions |
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Number | 5 |
Volume | 72 |
ISSN (Print) | 1938-6737 |
ISSN (Electronic) | 1938-5862 |
Other
Other | Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting |
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Country/Territory | United States |
City | San Diego |
Period | 5/29/16 → 6/2/16 |
Bibliographical note
Publisher Copyright:©The Electrochemical Society.