We have developed a novel conductivity based selective electrochemical etching to introduce nanometer sized pores into GaN. The nanoporous (NP) GaN can be considered as a new form of GaN with an unprecedented tunability in optical index. The advantages of NP-GaN for both edge-emitting laser diodes and vertical surface-emitting laser diodes (VCSEL) are subsequently exhibited.
|Original language||English (US)|
|Title of host publication||Wide Bandgap Semiconductor Materials and Devices 17|
|Editors||J. M. Zavada, S. Jang, J. K. Hite, V. Chakrapani, T. J. Anderson|
|Publisher||Electrochemical Society Inc.|
|Number of pages||10|
|State||Published - 2016|
|Event||Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting - San Diego, United States|
Duration: May 29 2016 → Jun 2 2016
|Other||Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting|
|Period||5/29/16 → 6/2/16|
Bibliographical noteFunding Information:
This research was supported by the National Science Foundation (NSF) under Award CMMI-1129964, and facilities used were supported by Yale SEAS cleanroom, YINQE, and NSF MRSEC DMR-1119826. We acknowledge Prof. Arto Nurmikko and Dr. Joonhee Lee at Brown University for their kind help with wafer dicing and discussions of optical measurement.